Datasheet4U Logo Datasheet4U.com

MRF6V14300HSR3 - RF Power Field Effect Transistors

Download the MRF6V14300HSR3 datasheet PDF (MRF6V14300HR3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power field effect transistors.

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6V14300H Rev. 3, 4/2010 MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V14300HR3-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • MRF6V14300HSR3 - RF Power Field Effect Transistors (Motorola)
  • MRF6V14300HR3 - RF Power Field Effect Transistors (Motorola)
  • MRF6V10250HSR3 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF6V12500HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF6V12500HSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF6V13250HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF6V13250HSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRF6V2010NBR1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF6V2010NR1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF6V2150N - RF Power Field Effect Transistor (Motorola Semiconductor)
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.
Published: |