MRF6V14300HR3 Datasheet (NXP) - RF Power Field Effect Transistors

MRF6V14300HR3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle.

These devices are suitable for use in pulsed applications.

Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain 18 dB D

MRF6V14300HR3 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Greater Negative Gate

* Source Voltage Range for Improved