Datasheet4U.com

MMRF1312HS - RF Power LDMOS Transistors

Product Overview

NXP

📥 Download Datasheet

MMRF1312HS RF Power LDMOS Transistors by NXP - Datasheet Preview — Datasheet preview – MMRF1312HS

Datasheet Details

Part number	MMRF1312HS
Manufacturer	NXP
File Size	422.79 KB
Description	RF Power LDMOS Transistors
Datasheet	MMRF1312HS Datasheet
Note	This datasheet PDF includes multiple part numbers: MMRF1312HS, MMRF1312H. Please refer to the document for exact specifications by model.
Additional preview pages of the MMRF1312HS datasheet.

Product details

Features

Internally input and output matched for broadband operation and ease of use.
Device can be used in a single--ended, push--pull or quadrature configuration.
Qualified up to a maximum of 52 VDD operation.
High ruggedness, handles > 20:1 VSWR.
Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing.
Characterized with series equivalent large--signal impedance parameters Typical.

📁 Similar Datasheet

MMR901XA - Pressure Sensor (MITSUMI)
MMR902 - Digital Output Gage Pressure Sensor (MITSUMI)
MMR931XA - Pressure Sensor (MITSUMI)

Other Datasheets by NXP

MMRF1312H - RF Power LDMOS Transistors
MMRF1312GS - RF Power LDMOS Transistors
MMRF1022HS - RF Power LDMOS Transistor
MMRF5017HS - RF Power GaN Transistor
MMRF5018HS - RF Power GaN Transistor

Published: Nov 30, 2024 |