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MHT1008N - RF Power LDMOS Transistor

NXP

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Datasheet Details

Part number	MHT1008N
Manufacturer	NXP
File Size	400.00 KB
Description	RF Power LDMOS Transistor
Datasheet	MHT1008N-NXP.pdf

MHT1008N Product details

Features

Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
Qualified for operation at 32 Vdc.
Integrated ESD protection.
150C case operating temperature.
150C die temperature capability Target.

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Published: Dec 17, 2022 |