LWE2015R - NPN microwave power transistor

Datasheet Details

Part number	LWE2015R
Manufacturer	NXP
File Size	62.42 KB
Description	NPN microwave power transistor
Datasheet	LWE2015R_PhilipsSemiconductors.pdf

APPLICATIONS Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications.

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage LWE2015R.

📁 LWE2015R Similar Datasheet

Other Datasheets by NXP

Published: Mar 30, 2005 |