LV1721E50R - NPN microwave power transistor

NXP

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Datasheet Details

Part number	LV1721E50R
Manufacturer	NXP
File Size	61.06 KB
Description	NPN microwave power transistor
Datasheet	LV1721E50R_PhilipsSemiconductors.pdf

LV1721E50R Product details

Description

Marking code: 1721E50R 3 2 Top view 3 handbook, halfpage LV1721E50R PINNING - SOT445A PIN 1 2 3 collector base emitter connected to ﬂange DESCRIPTION 1 c b e MAM251 NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A wideband ampliﬁer.MODE OF OPERATION Class-A (CW) f (GHz) 1.7 t

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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Published: Mar 30, 2005 |