LLE18100X Datasheet (NXP) - NPN silicon planar epitaxial microwave power transistor

LLE18100X, NPN silicon planar epitaxial microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer.

MODE OF OPERATION class AB (CW) f (GHz) 1.85 VCE (V) 24

LLE18100X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi