LFE18500X - NPN silicon planar epitaxial microwave power transistor

Datasheet Details

Part number	LFE18500X
Manufacturer	NXP
File Size	62.00 KB
Description	NPN silicon planar epitaxial microwave power transistor
Datasheet	LFE18500X_PhilipsSemiconductors.pdf

NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange.

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very good stability of the characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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Published: Mar 22, 2005 |