LEE1015 - NPN microwave power transistor

NXP

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Datasheet Details

Part number	LEE1015
Manufacturer	NXP
File Size	47.11 KB
Description	NPN microwave power transistor
Datasheet	LEE1015_PhilipsSemiconductors.pdf

LEE1015 Product details

Description

2 MAM229 LEE1015T PINNING - SOT122A PIN 1 2 3 4 collector emitter base emitter DESCRIPTION handbook, halfpage 4 c 1 3 b e NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.Marking code: 1015T.Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class A narrowband ampliﬁer (guaranteed values).MODE OF OPERATION Class A (CW) Note 1. The stated intermodulation distortion level is referred

Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very good stability of the characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.

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Other Datasheets by NXP

LEE1015T - NPN microwave power transistor

Published: Mar 22, 2005 |