LA6H0912-500 - LDMOS Avionics Radar Power Transistor

Name: LA6H0912-500
SKU: LA6H0912-500-644767

NXP

📥 Download Datasheet

LA6H0912-500 Datasheet Preview — Preview of LA6H0912-500 PDF

Datasheet Details

Part number	LA6H0912-500
Manufacturer	NXP
File Size	86.72 KB
Description	LDMOS Avionics Radar Power Transistor
Datasheet	LA6H0912-500_PhilipsSemiconductors.pdf

LA6H0912-500 Product details

Description

500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Features

I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %: N Output power = 500 W N Power gain = 17 dB N Efﬁciency = 50 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (960 MHz to 1215 MHz) I Internally matched for ease of use I Compliant to Directive 2002/.

📁 LA6H0912-500 Similar Datasheet

LA6082D - J-FET Input Dual Operational Amplifiers (Sanyo)
LA6082M - J-FET Input Dual Operational Amplifier (Sanyo)
LA6082S - J-FET Input Dual Operational Amplifiers (Sanyo)
LA6083D - J-FET Input Dual Operational Amplifier (Sanyo)
LA6083M - J-FET Input Dual Operational Amplifier (Sanyo)
LA6242H - Four-Channel Bridge Driver for CD Player (Sanyo Semicon Device)
LA6245P - Monolithic Linear IC (Sanyo Semicon Device)
LA6261 - 6CH driver for optical disk (Sanyo Semicon Device)

Other Datasheets by NXP

Published: Jun 10, 2009 |