CLF1G0035-100 Datasheet (NXP) - Broadband RF power GaN HEMT

CLF1G0035-100, Broadband RF power GaN HEMT

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.

Frequency of operation is from DC to 3.5 GHz.

Table 1.

CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a c

CLF1G0035-100 Features

* Frequency of operation is from DC to 3.5 GHz

* 100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT

* Excellent ruggedness (VSWR 10 : 1)

* High voltage operation (50 V)

* Thermally enhanced package 1.