Datasheet4U Logo Datasheet4U.com

BUK9635-55 - TrenchMOS transistor Logic level FET

BUK9635-55 Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

BUK9635-55 Applications

* BUK9635-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 34 85 175 35 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESC

📥 Download Datasheet

Preview of BUK9635-55 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK9635-55A - N-Channel MOSFET (NXP Semiconductors)
  • BUK9637-100E - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • BUK963R1-40E - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • BUK963R2-40B - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • BUK963R3-60E - N-Channel MOSFET (NXP Semiconductors)
  • BUK9606-40B - N-Channel MOSFET (NXP Semiconductors)
  • BUK9606-55A - TrenchMOS logic level FET (NXP Semiconductors)
  • BUK9606-55B - N-channel TrenchMOS FET (nexperia)

📌 All Tags

TrenchMOS transistor Logic level FET NXP
NXP BUK9635-55-like datasheet