Datasheet4U Logo Datasheet4U.com

BUK856-400IZ - Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

BUK856-400IZ Description

Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL .
Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications.

BUK856-400IZ Applications

* The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. BUK856-400 IZ QUICK REFERENCE DATA SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power d

📥 Download Datasheet

Preview of BUK856-400IZ PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK118-50DL - Monolithic temperature and overload protected logic level power MOSFET (NXP Semiconductors)
  • BUK127-50GT - PowerMOS transistor (Philips)
  • BUK138-50DL - Logic level TOPFET (Philips)
  • BUK139-50DL - TOPFET (nexperia)
  • BUK208-50Y - (BUK213-50Y / BUK208-50Y) Single channel high-side TOPFET (NXP Semiconductors)
  • BUK210-50Y - PowerMOS transistor TOPFET high side switch (NXP Semiconductors)
  • BUK213-50Y - (BUK213-50Y / BUK208-50Y) Single channel high-side TOPFET (NXP Semiconductors)
  • BUK214-50Y - TOPFET high side switch (NXP Semiconductors)

📌 All Tags

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT NXP
NXP BUK856-400IZ-like datasheet