BUK7909-75AIE Datasheet - NXP

BUK7909-75AIE N-channel TrenchPLUS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standar.

BUK7909-75AIE Features

* Electrostatically robust due to integrated protection diodes

* Low conduction losses due to low on-state resistance

* Q101 compliant

* Reduced component count due to integrated current sensor

* Suitable for standard level gate drive sources 1.3 Application

BUK7909-75AIE Datasheet (208.36 KB)