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BUK581-100A - PowerMOS transistor Logic level FET

BUK581-100A Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

BUK581-100A Applications

* The device is intended for use in automotive and general purpose switching applications. BUK581-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 1

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PowerMOS transistor Logic level FET NXP
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