Datasheet4U Logo Datasheet4U.com

BUK556-60H - PowerMOS transistor Logic level FET

BUK556-60H Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK556-60H Applications

* BUK556-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60 60 150 175 22 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain

📥 Download Datasheet

Preview of BUK556-60H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK555-100A - N-Channel MOSFET (INCHANGE)
  • BUK555-100B - N-Channel MOSFET (INCHANGE)
  • BUK118-50DL - Monolithic temperature and overload protected logic level power MOSFET (NXP Semiconductors)
  • BUK127-50GT - PowerMOS transistor (Philips)
  • BUK138-50DL - Logic level TOPFET (Philips)
  • BUK139-50DL - TOPFET (nexperia)
  • BUK208-50Y - (BUK213-50Y / BUK208-50Y) Single channel high-side TOPFET (NXP Semiconductors)
  • BUK210-50Y - PowerMOS transistor TOPFET high side switch (NXP Semiconductors)

📌 All Tags

PowerMOS transistor Logic level FET NXP
NXP BUK556-60H-like datasheet