BUK555-200B PowerMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK555-200B
Manufacturer: NXP ↗
File Size: 70.55 KB
Datasheet: BUK555-200B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor Logic level FET

Applications

* BUK555-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -200A 200 14 125 175 0.23 MAX. -200B 200 13 125 175 0.28 UNIT V A W ˚C Ω PINNING

BUK555-200B Distributors

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BUK555-200B PowerMOS transistor Logic level FET NXP

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