Datasheet Details
- Part number
- BUK475-100B
- Manufacturer
- NXP ↗
- File Size
- 72.90 KB
- Datasheet
- BUK475-100B_PhilipsSemiconductors.pdf
- Description
- PowerMOS transistor
BUK475-100B Description
Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
BUK475-100B Applications
* BUK475-100A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 14 30 150 0.08 MAX. -100B 100 12 30 150 0.1 UNIT V A W ˚C Ω
PINNING - SOT186A
PIN
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