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BUK456-100B - PowerMOS transistor

BUK456-100B Description

Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK456-100B Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 34 150 175 0.057 MAX. -100B 100 32 150 175 0.065 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab

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