Datasheet Details
- Part number
- BUK455-200B
- Manufacturer
- NXP ↗
- File Size
- 70.05 KB
- Datasheet
- BUK455-200B_PhilipsSemiconductors.pdf
- Description
- PowerMOS transistor
BUK455-200B Description
Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.
BUK455-200B Applications
* QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK455 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; MAX. -200A 200 14 125 175 0.23 MAX. -200B 200 13 125 175 0.28 UNIT V A W ˚C Ω
PINNING - TO220AB
PIN 1 2 3 tab
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