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BUK455-200B - PowerMOS transistor

BUK455-200B Description

Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK455-200B Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK455 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; MAX. -200A 200 14 125 175 0.23 MAX. -200B 200 13 125 175 0.28 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab

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