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BUK453-60B - PowerMOS transistor

BUK453-60B Description

Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK453-60B Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK453 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 22 75 175 0.08 MAX. -60B 60 20 75 175 0.10 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate dr

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