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BUK452-60B - PowerMOS transistor

BUK452-60B Description

Philips Semiconductors Product Specification PowerMOS transistor BUK452-60A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK452-60B Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 15 60 175 0.13 MAX. -60B 60 14 60 175 0.15 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate dr

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