Datasheet4U Logo Datasheet4U.com

BUJ101AU - Silicon Diffused Power Transistor

Description

High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUJ100LR NPN transistor WeEn
BUJ100LR Silicon diffused power transistor NXP Semiconductors
BUJ105AD Silicon diffused power transistor WeEn
BUJ302A Silicon NPN Power Transistor Inchange Semiconductor
BUJ302AX NPN power transistor WeEn

Other Datasheets by NXP Semiconductors

Part Number Description
BUJ101A Silicon Diffused Power Transistor
BUJ101AX Silicon Diffused Power Transistor
BUJ100 Silicon Diffused Power Transistor
BUJ100AT Silicon Diffused Power Transistor
BUJ103 Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.32 11 50 MAX. 700 700 400 1.5 3 50 1.0 14 70 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 1.0A;IB = 200 mA IC = 1.
Published: |