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BU4530AW - Silicon Diffused Power Transistor

Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors.

Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

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Datasheet preview – BU4530AW

Datasheet Details

Part number BU4530AW
Manufacturer NXP Semiconductors
File Size 24.19 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet BU4530AW Datasheet
Additional preview pages of the BU4530AW datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Object specification Silicon Diffused Power Transistor BU4530AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP. 10 8 t.b.f t.b.
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