Datasheet4U Logo Datasheet4U.com

BU2515AF - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU2515AF SILICON POWER TRANSISTOR SavantIC
BU2515AF NPN Transistor INCHANGE
BU2515AX NPN Transistor INCHANGE
BU2515DF NPN Transistor INCHANGE
BU2515DF SILICON POWER TRANSISTOR SavantIC

Other Datasheets by NXP Semiconductors

Part Number Description
BU2515AX Silicon Diffused Power Transistor
BU2515DF Silicon Diffused Power Transistor
BU2515DX Silicon Diffused Power Transistor
BU2506DF Silicon Diffused Power Transistor
BU2506DX Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 0.4 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 0.9 A f = 56 kHz ICsat = 4.
Published: |