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BSP122 - N-channel enhancement mode vertical D-MOS transistor

Description

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Datasheet preview – BSP122

Datasheet Details

Part number BSP122
Manufacturer NXP Semiconductors
File Size 58.57 KB
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet BSP122 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol.
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