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BSH299 - P-channel enhancement mode MOS transistor

BSH299 Description

DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective speciļ¬cation File under Discrete Semiconductors, SC13b.
drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package.

BSH299 Features

* Low threshold voltage
* High-speed switching
* No secondary breakdown

BSH299 Applications

* Power management
* Battery powered applications e. g. cellular phones

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P-channel enhancement mode MOS transistor NXP
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