BLS3135-65 Datasheet - NXP

BLS3135-65 Microwave power transistor

1 APPLICATIONS * Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flan.

BLS3135-65 Features

* Suitable for short and medium pulse applications

* Internal input and output matching networks for an easy circuit design

* Emitter ballasting resistors improve ruggedness

* Gold metallization ensures excellent reliability

* Interdigitated emitter-base struc

BLS3135-65 Datasheet (68.78 KB)