Datasheet Details
- Part number
- BLF9G38LS-90P
- Manufacturer
- NXP ↗
- File Size
- 175.61 KB
- Datasheet
- BLF9G38LS-90P-NXP.pdf
- Description
- Power LDMOS transistor
BLF9G38LS-90P Description
BLF9G38LS-90P Power LDMOS transistor Rev.2 * 3 July 2015 Product data sheet 1.Product profile 1.1 General .
90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
BLF9G38LS-90P Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
BLF9G38LS-90P Applications
* at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
IS-95
3400 to 3600 28 15.1
12.7 37.0
ACPR (dBc) 37 [1]
[1] Test signal: IS-95;
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