Datasheet Details
- Part number
- BLF988
- Manufacturer
- NXP ↗
- File Size
- 229.05 KB
- Datasheet
- BLF988-NXP.pdf
- Description
- Power LDMOS transistor
BLF988 Description
BLF988; BLF988S Power LDMOS transistor Rev.2 * 1 August 2013 Product data sheet 1.Product profile 1.1 General .
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.
BLF988 Features
* Excellent ruggedness (VSWR 40 : 1 through all phases)
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficiency
* Designed for broadband operation (400 MHz to 1000 MHz)
* Internal input matching for high gain and optimum broadband
BLF988 Applications
* and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information
Test signal
f (MHz)
PL(AV) (W)
PL(M) (W)
Gp D IMD3 (dB) (%) (dBc)
RF performance in a common source 860 MHz narrowband test ci
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