BLF881S, BLF881 - UHF Power LDMOS Transistor

Datasheet Details

Part number	BLF881S, BLF881
Manufacturer	NXP
File Size	243.29 KB
Description	UHF Power LDMOS Transistor
Datasheet	BLF881_NXP.pdf
Note	This datasheet PDF includes multiple part numbers: BLF881S, BLF881. Please refer to the document for exact specifications by model.

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

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2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion =.
34 dBc.
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance.

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Published: Jan 18, 2010 |