BLF578XRS, BLF578XR - Power LDMOS transistor

Datasheet Details

Part number	BLF578XRS, BLF578XR
Manufacturer	NXP
File Size	176.05 KB
Description	Power LDMOS transistor
Datasheet	BLF578XR-NXP.pdf
Note	This datasheet PDF includes multiple part numbers: BLF578XRS, BLF578XR. Please refer to the document for exact specifications by model.

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
Output power = 1400 W.
Power gain = 23.5 dB.
Efficiency = 69 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF to 500 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoH.

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Published: Jan 27, 2016 |