BLF246 - VHF power MOS transistor

NXP

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Datasheet Details

Part number	BLF246
Manufacturer	NXP
File Size	86.03 KB
Description	VHF power MOS transistor
Datasheet	BLF246_PhilipsSemiconductors.pdf

BLF246 Product details

Description

drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap.All leads are isolated from the flange.A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications.Refer to the General section of Data Handbook SC19a for further information.2 3 d g s MAM267 CAUTION The device is supplied in an antistatic package.The gate-source input must

Features

High power gain.
Low noise figure.
Easy power control.
Good thermal stability.
Withstands full load mismatch.

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Published: Mar 23, 2005 |