Datasheet Details
- Part number
- BLF2324M8LS200P
- Manufacturer
- NXP ↗
- File Size
- 124.46 KB
- Datasheet
- BLF2324M8LS200P-NXP.pdf
- Description
- Power LDMOS transistor
BLF2324M8LS200P Description
BLF2324M8LS200P Power LDMOS transistor Rev.1 * 3 June 2014 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.
BLF2324M8LS200P Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 2400 MHz)
BLF2324M8LS200P Applications
* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2300 to 2400
1740 28 60
17.2 3
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