Datasheet Details
- Part number
- BLF10M6200
- Manufacturer
- NXP ↗
- File Size
- 135.98 KB
- Datasheet
- BLF10M6200-NXP.pdf
- Description
- Power LDMOS transistor
BLF10M6200 Description
BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev.1 * 1 July 2013 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.
BLF10M6200 Features
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (700 MHz to 1000 MHz)
* Internally matched for ease of use
* Compliant to Directive 2002/95/EC, regarding restric
BLF10M6200 Applications
* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
28 40
20 28.5 39[1]
[1] Tes
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