Datasheet Details
- Part number
- BLC6G22-100
- Manufacturer
- NXP ↗
- File Size
- 77.38 KB
- Datasheet
- BLC6G22-100_PhilipsSemiconductors.pdf
- Description
- UHF power LDMOS transistor
BLC6G22-100 Description
www.DataSheet4U.com BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev.01 * 30 January 2006 Objective data sheet 1.Product profile 1.
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
BLC6G22-100 Features
* s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 =
* 37 dBc x ACPR =
* 40 dBc s Easy power control s Integrated ESD protection s Excellent r
BLC6G22-100 Applications
* at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 25
Gp (dB) 18
ηD (%) 32
IMD3 (dBc)
* 37 [1]
ACPR
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