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BFG325 - NPN 14 GHz wideband transistor

Description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.

Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability 1.3.

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Full PDF Text Transcription

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BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability 1.3 Applications  Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  analog and digital cellular telephones  cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)  radar detectors  pagers  Satellite Antenna TeleVision (SATV) tuners  repeater amplifiers in fiber-optic systems 1.
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