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BF410D - N-channel silicon field-effect transistors

Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.

These FETs can be supplied in four IDSS groups.

Features

  • are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for.

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📁 Similar Datasheet

Part Number Description Manufacturer
BF410D LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
BF410 LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
BF410A LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
BF410B LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group
BF410C LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Siemens Semiconductor Group

Other Datasheets by NXP Semiconductors

Part Number Description
BF410A N-channel silicon field-effect transistors
BF410B N-channel silicon field-effect transistors
BF410C N-channel silicon field-effect transistors
BF419 NPN high-voltage transistor
BF420 NPN high-voltage transistors

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D).
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