Datasheet4U Logo Datasheet4U.com

BD329 - NPN power transistor

Description

NPN power transistor in a TO-126; SOT32 plastic package.

PNP complement: BD330.

Simplified outline (TO-126; SOT32) and symbol.

Features

  • High current (max. 3 A).
  • Low voltage (max. 20 V).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD329 NPN Transistor INCHANGE
BD3201 Digital Reverb Engine BDNC
BD3201-14A Digital Reverb Engine BDNC
BD3004HFP Voltage Regulator Rohm
BD3005HFP Voltage Regulator Rohm

Other Datasheets by NXP Semiconductors

Part Number Description
BD330 PNP power transistor
BD331 Silicon Darlington Power Transistors
BD333 Silicon Darlington Power Transistors
BD335 Silicon Darlington Power Transistors
BD337 Silicon Darlington Power Transistors

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD329 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification NPN power transistor FEATURES • High current (max. 3 A) • Low voltage (max. 20 V). APPLICATIONS • Especially for battery equipped applications. DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD330. handbook, halfpage BD329 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol.
Published: |