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Freescale Semiconductor Technical Data
Document Number: AFT23S160W02S Rev. 0, 11/2013
RF Power LDMOS Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.
• Typical Single−Carrier W−CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
hD
Output PAR ACPR
IRL
(%)
(dB)
(dBc) (dB)
2300 MHz 2350 MHz 2400 MHz
17.7
31.0
17.8
30.5
17.9
30.3
6.8
−34.6
−18
6.7
−34.5
−25
6.6
−33.
AFT23S160W02GSR3 Datasheet
