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Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.
Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW)
Frequency (MHz)
Gps (dB)
ηD
P1dB
(%)
(W)
764
18.0
74.1
32
870
17.2
71.0
31
941
15.7
68.1
31
800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency (MHz)
Gps (dB)
ηD
P1dB
(%)
(W)
760
15.7
62.0
44
820
15.7
63.0
37
870
15.5
61.
AFT09MS031GNR1 Datasheet
