AFT09MS007NT1 - RF Power LDMOS Transistor

Features

Characterized for Operation from 136 to 941 MHz.
Unmatched Input and Output Allowing Wide Frequency Range Utilization.
Integrated ESD Protection.
Integrated Stability Enhancements.
Wideband.
Full Power Across the Band.
Exceptional Thermal Performance.
Extreme Ruggedness.
High Linearity for: TETRA, SSB.
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical.

AFT09MS007NT1 rf power ldmos transistor by NXP - Datasheet Preview

Datasheet Details

Part number	AFT09MS007NT1
Manufacturer	NXP Semiconductors
File Size	1.38 MB
Description	RF Power LDMOS Transistor
Datasheet	AFT09MS007NT1 Datasheet

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 870 (1) 15.2 71.0 7.3 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin Gps D Pout (W) (dB) (%) (W) 136–174 350–470 (2,5) 450–520 (3,5) 760–860 (4,5) 0.25 14.6 69.0 7.2 0.20 15.6 60.9 7.3 0.22 15.4 56.0 7.5 0.23 15.1 48.1 7.

Published: Jul 13, 2020 |