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A3T09S100N Airfast RF Power LDMOS Transistor

A3T09S100N Description

A3T09S100N Airfast RF Power LDMOS Transistor Rev.0 * March 2021 Designed for two *way radio applications with frequencies from 136 to.

A3T09S100N Features

* Characterized for operation from 136 to 941 MHz
* Unmatched input and output allowing wide frequency range utilization
* Integrated ESD protection
* Wideband
* full power across each mobile radio band
* Exceptional thermal performance
* High linearity for: TETRA, SS

A3T09S100N Applications

* with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
* signal, common
* source amplifier applications in radio equipment. Typical Single
* Carrier W
* CDMA Production Fixture Performance: VDD = 28 Vdc

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Datasheet Details

Part number
A3T09S100N
Manufacturer
NXP ↗
File Size
421.84 KB
Datasheet
A3T09S100N-NXP.pdf
Description
Airfast RF Power LDMOS Transistor

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