A2I35H060NR1 Datasheet (NXP) - RF LDMOS Wideband Integrated Power Amplifiers

A2I35H060NR1, RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev.

0, 4/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on chip matching that makes it usable from 3400 to 3800 MHz.

This multi stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

3500 MHz Typical Doherty Single Carrier W CDMA Characterizat

A2I35H060NR1 Features

* Advanced High Performance In

* Package Doherty

* On

* Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)

* Designed for Digital Predistortion Error Correction Systems A2I