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6N06T - PHT6N06T

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

PHT6N06T in SOT223.

Features

  • s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3.

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    Full PDF Text Transcription

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    PHT6N06T TrenchMOS™ standard level FET M3D087 Rev. 02 — 03 February 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2.
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