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34932 - Dual 5.0A H-Bridge

Description

of each pin can be found in the Functional Description section beginning on page 12.

Table 2.

Features

  • 5.0 V to 36 V continuous with 24 V nominal operating voltage (transient operation from 5.0 V to 40 V).
  • 235 mΩ maximum RDS(on) at TJ = 150 °C (each H-Bridge MOSFET).
  • 3.0 V and 5.0 V TTL/CMOS logic compatible inputs.
  • Output short-circuit protection (short to VPWR or GND).
  • Overcurrent limiting (regulation) via internal constant-off-time PWM.
  • Temperature dependant current limit threshold reduction to allow for continuous operation without shutdo.

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Full PDF Text Transcription

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NXP Semiconductors Data Sheet: Technical Data Document Number: MC34932 Rev. 4.0, 8/2016 Dual 5.0 A H-Bridge The 34932 is a monolithic H-Bridge Power IC in a robust thermally enhanced package. The 34932 has two independent monolithic H-Bridge Power ICs in the same package. They are designed for any low voltage DC servo motor control application within the current and voltage limits stated in this specification. This device is powered by SMARTMOS technology. Each H-Bridge in the 34932 is able to control inductive loads with currents up to 5.0 A peak. RMS current capability is subject to the degree of heatsinking provided to the device package. Internal peak current limiting (regulation) is activated at load currents above 6.5 A ±1.5 A.
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