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PSMN2R6-30YLC - N-channel MOSFET

Description

Logic level enhancement mode N-channel MOSFET in LFPAK package.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features

  • High reliability Power SO8 package, qualified to 175°C.
  • Low parasitic inductance and resistance.
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology.
  • Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3.

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Datasheet Details

Part number PSMN2R6-30YLC
Manufacturer NXP Semiconductors
File Size 412.85 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN2R6-30YLC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr LF PA K PSMN2R6-30YLC N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.
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