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PSMN2R5-30YL - N-channel FET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in industrial and communications applications.

Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

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Datasheet Details

Part number PSMN2R5-30YL
Manufacturer NXP Semiconductors
File Size 228.42 KB
Description N-channel FET
Datasheet download datasheet PSMN2R5-30YL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.4 Quick reference data Table 1.
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