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BUK7E3R1-40E - N-channel TrenchMOS standard level FET

Description

Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Repetitive avalanche rated.
  • Suitable for thermally demanding environments due to 175 °C rating.
  • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3.

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Datasheet Details

Part number BUK7E3R1-40E
Manufacturer NXP Semiconductors
File Size 213.55 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet BUK7E3R1-40E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK7E3R1-40E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1.
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