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BUK7511-55B, BUK7E11-55B TRENCHMOS-TM STANDARD LEVEL FET

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Description

BUK75/76/7E11-55B TrenchMOS™ standard level FET Rev.02 * 11 November 2003 www.DataSheet4U.com Product data 1.Product profile 1.1 Descripti.
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

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This datasheet PDF includes multiple part numbers: BUK7511-55B, BUK7E11-55B. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BUK7511-55B, BUK7E11-55B
Manufacturer
NXP ↗ Semiconductors
File Size
327.53 KB
Datasheet
BUK7E11-55B_NXPSemiconductors.pdf
Description
TRENCHMOS-TM STANDARD LEVEL FET
Note
This datasheet PDF includes multiple part numbers: BUK7511-55B, BUK7E11-55B.
Please refer to the document for exact specifications by model.

Applications

* s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 9.9 mΩ (typ) s Ptot ≤ 157 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, and SOT226 simplified out

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